Модуль IGBT Infineon FF150R12KS4

Спецификация FF150R12KS4
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1.25 kW
Package/Case: 62 mm
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.5 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Series: IGBT2 Fast
10
Subcategory: IGBTs
Technology: Si
Width: 61.4 mm
Part # Aliases: SP000100706 FF150R12KS4HOSA1
Unit Weight: 340 g